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CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY FOR POLYCRYSTALLINE SILICON FILMS

被引：12
作者：
OPPOLZER, H
FALCKENBERG, R
DOERING, E
机构：
来源：
JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期
关键词：
D O I：
10.1111/j.1365-2818.1980.tb00251.x
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
引用
收藏
页码：97 / 103
页数：7
相关论文
共 7 条
[1]   MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS [J].
ANDERSON, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1540-1546
[2]   INVESTIGATION OF POLYCRYSTALLINE SILICON LAYERS BY ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION [J].
HORIUCHI, S .
SOLID-STATE ELECTRONICS, 1975, 18 (12) :1111-&
[3]   CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI .
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04) :221-229
[4]  
MULLER B, 1975, BOSCH TECHN BERICHTE, V5, P153
[5]   STRUCTURES OF SI FILMS CHEMICALLY VAPOR-DEPOSITED ON AMORPHOUS SIO2 SUBSTRATES [J].
NAGASIMA, N ;
KUBOTA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) :1105-1112
[6]  
PETIT HR, 1971, 25TH P AN M EMAG, P290
[7]  
SPLITTGERBER H, 1977, 3RD P INT S SIL MAT, P253
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