DEFORMATION OCCURRING DURING DEPOSITION OF POLYCRYSTALLINE-SILICON FILMS

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1532 - &

[3] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 553 - &

[4] NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07): : 915 - +

[5] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 14 - 19

[6] INTRINSIC STRESS IN EVAPORATED METAL FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 823 - &

[7] THE ORIGIN OF STRESS IN METAL LAYERS CONDENSED FROM THE VAPOUR IN HIGH VACUUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (407): : 905 - 910

[8] VANAMSTE.JJ, 1967, PHILIPS TECH REV, V28, P57

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1532 - &

[3] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 553 - &

[4] NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07): : 915 - +

[5] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 14 - 19

[6] INTRINSIC STRESS IN EVAPORATED METAL FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 823 - &

[7] THE ORIGIN OF STRESS IN METAL LAYERS CONDENSED FROM THE VAPOUR IN HIGH VACUUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (407): : 905 - 910

[8] VANAMSTE.JJ, 1967, PHILIPS TECH REV, V28, P57