DRY ETCHING OF N-TYPE AND P-TYPE POLYSILICON - PARAMETERS AFFECTING THE ETCH RATE

被引：17

作者：

BERG, S ^{[1
]}

NENDER, C ^{[1
]}

BUCHTA, R ^{[1
]}

NORSTROM, H ^{[1
]}

机构：

[1] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574571

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1600 / 1603

页数：4

共 9 条

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[2] DIELEMAN J, 1984, SOLID STATE TECHNOL, V27, P191
[3] EPHRATH LM, 1982, 1ST P INT S VLSI SCI, V827, P108
[4] IBHOTSON DE, 1984, APPL PHYS LETT, V44, P1129
[5] LEAHY MF, 1983, 4TH P S PLASM PROC, V8310, P235
[6] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON
MOGAB, CJ
LEVINSTEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730
[7] SAWIN HH, 1985, 5TH P S PLASM PROC, P534
[8] REACTIVE ION ETCHING OF SILICON
SCHWARTZ, GC
SCHAIBLE, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413
[9] PLASMA-ASSISTED ETCHING MECHANISMS - THE IMPLICATIONS OF REACTION PROBABILITY AND HALOGEN COVERAGE
WINTERS, HF
COBURN, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1376 - 1383