PLASMA-ASSISTED ETCHING MECHANISMS - THE IMPLICATIONS OF REACTION PROBABILITY AND HALOGEN COVERAGE

被引：120

作者：

WINTERS, HF

COBURN, JW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 05期

关键词：

D O I：

10.1116/1.582996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1376 / 1383

页数：8

相关论文

共 38 条

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