PLASMA-ASSISTED ETCHING MECHANISMS - THE IMPLICATIONS OF REACTION PROBABILITY AND HALOGEN COVERAGE

被引：120

作者：

WINTERS, HF

COBURN, JW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 05期

关键词：

D O I：

10.1116/1.582996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1376 / 1383

页数：8

相关论文

共 38 条

[21] COMPARISON OF XEF2 AND F-ATOM REACTIONS WITH SI AND SIO2
IBBOTSON, DE
FLAMM, DL
MUCHA, JA
DONNELLY, VM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1129 - 1131
[22] A SIMS STUDY OF ION-ASSISTED ETCHING MECHANISMS - ADSORBED FLUORINE ON SI REMOVED BY ION-BOMBARDMENT
KNABBE, EA
COBURN, JW
KAY, E
[J]. SURFACE SCIENCE, 1982, 123 (2-3) : 427 - 438
[23] SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA
LEE, YH
CHEN, MM
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5966 - 5973
[24] SYNCHROTRON PHOTOEMISSION INVESTIGATION OF THE INITIAL-STAGES OF FLUORINE ATTACK ON SI SURFACES - RELATIVE ABUNDANCE OF FLUOROSILYL SPECIES
MCFEELY, FR
MORAR, JF
SHINN, ND
LANDGREN, G
HIMPSEL, FJ
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 764 - 770
[25] DIFLUOROCARBENE EMISSION-SPECTRA FROM FLUOROCARBON PLASMAS AND ITS RELATIONSHIP TO FLUOROCARBON POLYMER FORMATION
MILLARD, MM
KAY, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 160 - 165
[26] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS
SCHAIBLE, PM
SCHWARTZ, GC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380
[27] SCHWARTZ GC, 1976, ETCHING, P122
[28] ABINITIO CLUSTER STUDY OF THE INTERACTION OF FLUORINE AND CHLORINE WITH THE SI(111) SURFACE
SEEL, M
BAGUS, PS
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2023 - 2038
[29] SEKINE M, 1983, 5TH P S DRY PROC TOK, P97
[30] SI AND AL ETCHING AND PRODUCT DETECTION IN A PLASMA BEAM UNDER ULTRAHIGH-VACUUM
SMITH, DL
BRUCE, RH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2045 - 2051

← 1 2 3 4 →