SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA

被引：53

作者：

LEE, YH

CHEN, MM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期

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D O I：

10.1063/1.331774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5966 / 5973

页数：8

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[1] CHEN MM, 1983, ELECTROCHEM SOC EXTE, P301
[2] Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856
[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY
COBURN, JW
CHEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136
[5] REACTIVE ION ETCHING FOR VLSI
EPHRATH, LM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319
[6] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[7] THE REACTION OF FLUORINE-ATOMS WITH SILICON
FLAMM, DL
DONNELLY, VM
MUCHA, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639
[8] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION
GERLACHMEYER, U
COBURN, JW
KAY, E
[J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188
[9] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING
HARSHBARGER, WR
PORTER, RA
MILLER, TA
NORTON, P
[J]. APPLIED SPECTROSCOPY, 1977, 31 (03) : 201 - 207
[10] JONES FL, 1956, HDB PHYSIK, V22, P63