SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI

被引：89

作者：

BARKER, RA ^{[1
]}

MAYER, TM ^{[1
]}

PEARSON, WC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 01期

关键词：

D O I：

10.1116/1.582539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：37 / 42

页数：6

相关论文

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