REACTIVE ION-BEAM ETCHING WITH CF4 - CHARACTERIZATION OF A KAUFMAN ION-SOURCE AND DETAILS OF SIO2 ETCHING

被引：68

作者：

MAYER, TM ^{[1
]}

BARKER, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期

关键词：

D O I：

10.1149/1.2123929

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：585 / 591

页数：7

共 24 条

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[7]

HARPER JME, 1980, ELECTRON ION BEAM SC, P518

[8] SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM [J].

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[10]

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