CHEMICAL SPUTTERING YIELDS OF SILICON RESULTING FROM F+,CFN+(N=1,2,3)ION BOMBARDMENT

[1] CF4 ETCHING IN A DIODE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 226 - 231

[2] BRUCE RH, 1980, MAY EL SOC M ST LOUI, P243

[3] ETCHING SILICON WITH FLUORINE-GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1946 - 1948

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] FLAMM DL, 1978, J APPL PHYS, V49, P3796

[7] FRIESER RG, 1981, PLASMA PROCESSING, V81

[8] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[9] SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2309 - 2310

[10] MIYAKE K, 1982, UNPUB NUCL INSTRUM M

[1] CF4 ETCHING IN A DIODE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 226 - 231

[2] BRUCE RH, 1980, MAY EL SOC M ST LOUI, P243

[3] ETCHING SILICON WITH FLUORINE-GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1946 - 1948

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] FLAMM DL, 1978, J APPL PHYS, V49, P3796

[7] FRIESER RG, 1981, PLASMA PROCESSING, V81

[8] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[9] SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2309 - 2310

[10] MIYAKE K, 1982, UNPUB NUCL INSTRUM M