Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness

Large-area silicon p-i-n photodetectors with an epitaxial thickness ranging from 10-20 mu m were fabricated. The photodiode bandwidth, responsivity, capacitance and dark current were characterized as a function of the epilayer thickness. The determination of these parameters is important to facilitate the designing of photodiodes in which the trade-off between various parameters need to be known, and in aiding its integration with other devices where the epitaxial requirements can be quite different. (C) 1997 Elsevier Science Ltd.