DEVELOPMENT OF AN INTEGRATED HIGH-SPEED SILICON PIN PHOTODIODE SENSOR

A silicon integrated PIN photodiode sensor, combined with a bipolar IC on same substrate (that is, a PM photo integrated circuit Sensor: PIN-PICS), was developed by employing a high resistive P-- epitaxial layer on a pf substrate for creating a high speed and high optical responsivity PM photodiode, We fabricated this device based on two special techniques: 1) the PIN photodiode is formed on a P--/P+ substrate structure and isolated from bipolar components by the combination of a P--well and a trench isolation, and 2) bipolar components are formed by the doubly diffused buried layer of the P--well and the N+ collector wall, All of these components, such as npn and pnp transist+ors, were arranged within the lightly doped P--well regions, From several kinds of trial samples, the following results were obtained. The PIN photodiode with 0.145 mm active area indicated 680 MHz for cutoff frequency at 10 V bias with 830 nm radiation, In the case of 20 V bias, this value exceeded 1.5 GHz. This PIN-PICS was applied to a 10 Mbit/s burst mode compatible optical monolithic receiver and a transimpedance amplifier, and it has shown the expected results.