Carbon nanotube-polybithiophene photovoltaic devices with high open-circuit voltage

被引：35

作者：

Patyk, Rodolfo L.

Lomba, Bruno S.

Nogueira, Ana Flavia

Furtado, Clascidia A.

Santos, Adelina Pinheiro

Mello, Regina M. Q.

Micaroni, Liliana

Hummelgen, Ivo A.

机构：

[1] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil

[2] Univ Estadual Campinas, Lab Nanotechnol & Energia Solar, Inst Quim, BR-13084971 Campinas, SP, Brazil

[3] CNEN, CDTN, Lab Quim Nanoestructuras, Belo Horizonte, MG, Brazil

[4] Univ Fed Parana, Dept Quim, BR-81531990 Curitiba, Parana, Brazil

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 01期

关键词：

D O I：

10.1002/pssr.200600057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the preparation of photovoltaic devices using modified single wall carbon nanotubes, SWNTs. Devices are produced stacking on top of fluorine-doped tin-oxide, an electrochemically deposited polybithiophene layer, a layer of SWNT blended with poly(3-octylthiophene) and an evaporated top metal contact, Ca/Al or Al. Ca/Al-top-electrode devices achieve open-circuit voltages of 1.81 V and average power conversion efficiency of 1.48% at irradiance of 15.5 W m(-2), spectrally distributed following AM1.5.

引用

页码：R43 / R45

页数：3

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