The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes

被引：57

作者：

Chattopadhyay, P

机构：

[1] Department of Electronic Science, Univ. Coll. of Sci. and Technology, Calcutta 700009, 92, APC Road

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1996年 / 29卷 / 03期

关键词：

D O I：

10.1088/0022-3727/29/3/047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of Schottky barrier diodes were studied considering the effect of shunt resistance. Both the DC and the AC behaviour of the device were investigated. It was found that the shunt resistance has a remarkable effect at low bias in contrast to the series resistance which influences the electrical characteristics at large bias. The standard evaluation techniques based on the DC characteristics are found to be inaccurate in the presence of the shunt resistance. Also, the AC conductance and capacitance of the device are significantly influenced, making our previously developed model limited in the presence of a shunt resistance. The well-known conductance and capacitance techniques for the characterization of these devices seem to be inapplicable at low bias because of the above-mentioned parasitic effect.

引用

页码：823 / 829

页数：7

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