FREQUENCY-DEPENDENCE OF FORWARD CAPACITANCE VOLTAGE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES

被引：239

作者：

CHATTOPADHYAY, P

RAYCHAUDHURI, B

机构：

[1] Department of Electronic Science, University College of Science and Technology, Calcutta, 700 009

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期

关键词：

D O I：

10.1016/0038-1101(93)90272-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes were investigated by considering the series resistance effect. It is seen that in presence of a series resistance, the capacitance-voltage plot exhibits a peak. The peak value of the capacitance is found to vary with series resistance, interface state density and the frequency of the a.c. signal. The effect of series resistance on the capacitance is found appreciable at higher frequencies when capacitance decreases rapidly with frequency. On the other hand, the conductance of the diode increases with frequency in the high frequency limit. Such a variation in conductance limits the use of well known conductance technique to determine interface state density.

引用

页码：605 / 610

页数：6

共 13 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].