ELECTRONIC STATES AT SILICIDE-SILICON INTERFACES

被引：105

作者：

HO, PS ^{[1
]}

YANG, ES ^{[1
]}

EVANS, HL ^{[1
]}

WU, X ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

关键词：

D O I：

10.1103/PhysRevLett.56.177

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：177 / 180

页数：4

共 17 条

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