Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties

被引：41

作者：

Ahlskog, M ^{[1
]}

Tarkiainen, R ^{[1
]}

Roschier, L ^{[1
]}

Hakonen, P ^{[1
]}

机构：

[1] Helsinki Univ Technol, Low Temp Lab, FIN-02015 HUT, Finland

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1332107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A three-terminal nanotube device was fabricated from two multiwalled nanotubes by pushing one on top of the other using an atomic-force microscope. The lower nanotube, with gold contacts at both ends, acted as the central island of a single-electron transistor while the upper one functioned as a gate electrode. Coulomb blockade oscillations were observed on the nanotube at sub-Kelvin temperatures. The voltage noise of the nanotube single-electron transistor (SET) was gain dependent as in conventional SETs. The charge sensitivity at 10 Hz was 6x10(-4) e/root Hz. (C) 2000 American Institute of Physics. [S0003-6951(00)05150-0].

引用

页码：4037 / 4039

页数：3

共 13 条

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