Nitrogen-doped gallium phosphide nanobelts

被引：36

作者：

Seo, HW

Bae, SY

Park, J ^{[1
]}

Yang, H

Kang, M

Kim, S

Park, JC

Lee, SY

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea

[3] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[4] Hynix Semicond Inc, Ichon 467701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 21期

关键词：

D O I：

10.1063/1.1578521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen-doped gallium phosphide nanobelts were directly synthesized via a sublimation of ball-milled powders under ammonia flow. The average width of the nanobelts is 300 nm and the thickness is about 1/10 of the width. They consist of single-crystalline zinc blende structure crystal with the [111] direction parallel to the belt axis. Electron energy-loss spectroscopy reveals that the nitrogen doping occurs mainly in the surface region. Photoluminescence shows the typical isoelectronic bound exciton peaks in the range of 2.11-2.25 eV, suggesting a concentration of similar to10(18) cm(-3) nitrogen atoms. (C) 2003 American Institute of Physics.

引用

页码：3752 / 3754

页数：3

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