Growth of low-defect density Ino0.25Gao0.75As on GaAs by molecular beam epitaxy

被引：10

作者：

Pickrell, GW ^{[1
]}

Chang, KL

Epple, JH

Cheng, KY

Hsieh, KC

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1322040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth parameters of In(0.25)Ga(0.75)AS grown on GaAs by molecular beam epitaxy were investigated. Low substrate temperatures coupled with lower growth rates and low arsenic overpressures were explored and the corresponding threading dislocation densities were determined using transmission electron microscopy. Threading dislocation densities in layers much thicker than the critical thickness were found to be as low as 1x10(7) cm(-2) using optimal growth conditions. In addition, the critical thickness of the ternary alloy was estimated. The evolution of the misfit dislocations and threading dislocations was also examined as a function of epilayer thickness. (C) 2000 American Vacuum Society. [S0734-211X(00)13306-2].

引用

页码：2611 / 2614

页数：4

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