Second-harmonic imaging of semiconductor quantum dots

被引:8
作者
Erland, J
Bozhevolnyi, SI
Pedersen, K
Jensen, JR
Hvam, JM
机构
[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
[2] Aalborg Univ, Inst Phys, DK-9220 Aalborg, Denmark
关键词
D O I
10.1063/1.1306634
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum. In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics. [S0003-6951(00)00932-3].
引用
收藏
页码:806 / 808
页数:3
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