Electrical transport and 1/f noise in semiconducting carbon nanotubes

被引：23

作者：

Lin, Yu-Ming ^{[1
]}

Appenzeller, Joerg ^{[1
]}

Chen, Zhihong ^{[1
]}

Avouris, Phaedon ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 37卷 / 1-2期

关键词：

carbon nanotube; noise; Schottky barrier; FET;

D O I：

10.1016/j.physe.2006.07.008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate electrical transport,and noise m semiconducting carbon nanotubes. By studying carbon nanotube devices with various,diameters, and contact metals, we show that the,ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：72 / 77

页数：6

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