Laterally-resolved study of the Au/SiNx/GaAs(100) interface

被引：6

作者：

Almeida, J ^{[1
]}

Margaritondo, G

Coluzza, C

Davy, S

Spajer, M

Courjon, D

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland

[2] Univ Roma La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy

[3] Univ Franche Comte, Lab Opt, F-25030 Besancon, France

来源：

APPLIED SURFACE SCIENCE | 1998年 / 125卷 / 01期

关键词：

D O I：

10.1016/S0169-4332(97)00411-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a microscopic study of the Au/5 Angstrom SiNx/GaAs Schottky barrier based on scanning near-field optical microscopy. Photocurrent yield microimages taken at different photon energies reveal non-topographic features. Taking into account their dependence on photon energy and bias, such features are consistent with lateral variations of the local density of states related to defects. The results, therefore, confirm that lateral variations must be considered when analyzing semiconductor interfaces and of the corresponding devices. (C) 1998 Elsevier Science B.V.

引用

页码：6 / 10

页数：5