Determination of second-order nonlinear optical susceptibility of GaN films on sapphire

被引：13

作者：

Fujita, T

Hasegawa, T

Haraguchi, M

Okamoto, T

Fukui, M

Nakamura, S

机构：

[1] Univ Tokushima, Fac Engn, Dept Opt Sci & Technol, Tokushima 7708506, Japan

[2] Anan Coll Technol, Dept Elect Engn, Tokushima 7740017, Japan

[3] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 5A期

关键词：

second-harmonic generation; Maker fringe technique; second-order nonlinear susceptibility; GaN;

D O I：

10.1143/JJAP.39.2610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The second-order nonlinear susceptibilities of GaN films on sapphire were determined by the Maker fringe technique. In deriving the second-harmonic intensity, the bound wave propagating from the GaN-air interface to the GaN-sapphire interface and that propagating in the opposite direction were taken into account. We obtained \chi(zxx)((2))\ 14.7 +/- 0.2 pm/V, \chi(xzx)((2))\ = 14.4 +/- 0.2 pm/V and \chi(zzz)((2))\ = 29.7 +/- 0.7 pm/V for the GaN film with a thickness of 2.55 mu m using fundamental light with a wavelength of 1.064 mu m.

引用

页码：2610 / 2613

页数：4

共 9 条

[1] Ultrafast second-harmonic generation spectroscopy of GaN thin films on sapphire [J].