Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine

被引:3
作者
Loh, KP
Wy, FA
Lim, CW
Zhang, X
Chen, W
Xie, XN
Xu, H
Wee, ATS
机构
[1] Natl Univ Singapore, Dept Chem, Singapore, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 117548, Singapore
关键词
boron nitride nanotubes; radio-frequency plasma; chemical vapor deposition;
D O I
10.1016/S0925-9635(03)00025-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The deposition of boron nitride nanomaterials and ultrathin films in high vacuum conditions (1 X 10(-6)-1 X 10(-3) Torr) using molecular borazine as well as pre-dissociated borazine has been investigated with the motivation of studying the nucleation efficiency of BN under high vacuum conditions. Molecular borazine displays negligible sticking probability on Si(1 1 1) 7 X 7 at room temperature. Pre-adsorbing the borazine on silicon at 140 K and subsequent annealing is effective in forming ultrathin hexagonal films on the sample. It is possible to nucleate BN nanomaterials on nickel-sputtered silicon with high efficiency if the borazine is first discharged in a radio-frequency plasma to form reactive radicals. High quality crystalline h-BN thin films, as well as BN nanotubes can be formed on nickel via this approach. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1103 / 1107
页数:5
相关论文
共 17 条
[1]   XPD and STM investigation of hexagonal boron nitride on Ni(111) [J].
Auwärter, W ;
Kreutz, TJ ;
Greber, T ;
Osterwalder, J .
SURFACE SCIENCE, 1999, 429 (1-3) :229-236
[2]   Single-walled BN nanostructures [J].
Bengu, E ;
Marks, LD .
PHYSICAL REVIEW LETTERS, 2001, 86 (11) :2385-2387
[3]   BORON-NITRIDE NANOTUBES [J].
CHOPRA, NG ;
LUYKEN, RJ ;
CHERREY, K ;
CRESPI, VH ;
COHEN, ML ;
LOUIE, SG ;
ZETTL, A .
SCIENCE, 1995, 269 (5226) :966-967
[4]  
Fullam S, 2000, ADV MATER, V12, P1430, DOI 10.1002/1521-4095(200010)12:19<1430::AID-ADMA1430>3.0.CO
[5]  
2-8
[6]   Large-scale synthesis and HRTEM analysis of single-walled B- and N-doped carbon nanotube bundles [J].
Golberg, D ;
Bando, Y ;
Bourgeois, L ;
Kurashima, K ;
Sato, T .
CARBON, 2000, 38 (14) :2017-2027
[7]   Nanotubes in boron nitride laser heated at high pressure [J].
Golberg, D ;
Bando, Y ;
Eremets, M ;
Takemura, K ;
Kurashima, K ;
Yusa, H .
APPLIED PHYSICS LETTERS, 1996, 69 (14) :2045-2047
[8]  
Han WQ, 2000, APPL PHYS A-MATER, V71, P83
[9]   Synthesis of boron nitride nanotubes from carbon nanotubes by a substitution reaction [J].
Han, WQ ;
Bando, Y ;
Kurashima, K ;
Sato, T .
APPLIED PHYSICS LETTERS, 1998, 73 (21) :3085-3087
[10]   Boron nitride nanotubes with reduced numbers of layers synthesized by arc discharge [J].
Loiseau, A ;
Willaime, F ;
Demoncy, N ;
Hug, G ;
Pascard, H .
PHYSICAL REVIEW LETTERS, 1996, 76 (25) :4737-4740