Fabrication of silicon nanowires

被引：22

作者：

Liu, JL ^{[1
]}

Lu, Y

Shi, Y

Gu, SL

Jiang, RL

Wang, F

Zheng, YD

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Inst Solid State Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 05期

关键词：

D O I：

10.1007/s003390050709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pentagon-shaped silicon wires with Linewidth around 300nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O-2 at 750 degrees C and 850 degrees C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 degrees C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 degrees C become circular in shape. The oxidation-temperature dependence of the sample shapes is discussed. Our results should be useful in generating silicon nanowires coated with SiO2 in microelectronic technology with careful selection of the SiO2 growth temperatures.

引用

页码：539 / 541

页数：3

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