Nanoscale phase separation effects near (r)over-bar=2.4 and 2.67, and rigidity transitions in chalcogenide glasses

被引:116
作者
Boolchand, P [1 ]
Georgiev, DG [1 ]
Qu, T [1 ]
Wang, F [1 ]
Cai, LC [1 ]
Chakravarty, S [1 ]
机构
[1] Univ Cincinnati, Dept Elect Comp Engn & Comp Sci, Cincinnati, OH 45221 USA
基金
美国国家科学基金会;
关键词
nanoscale phase separation effects; rigidity transitions; chalcogenide glasses; Raman; Mossbauer;
D O I
10.1016/S1631-0748(02)01440-6
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanoscale phase separation effects are of general interest in glass science. Such structural effects produce usually pronounced changes in glass physical properties which can mask the more subtle elastic effects related to rigidity transitions. The glass-transition temperature, T-g, is an intrinsic measure of network connectivity. It can be expected to increase or decrease as a network polymerizes or nanoscale phase separates. Compositional trends in T-g(x) in binary AsxSe1-x and GeySe1-y glasses show thresholds near the stoichiometric compositions, x = 2/5 or a mean coordination number (r) over bar = 2.4, y = 1/3 or (r) over bar = 2.67. These T-g trends in conjunction with spectroscopic (Raman, Mossbauer) evidence of broken chemical order suggest that the stoichiometric glasses As2Se, and GeSe2 consist of a Se-rich majority phase that is separate from a compensating Ge- or As-rich minority phase, i.e., they are nanoscale phase separated. On the other hand, ternary Ge-x(As or P)(x)Se1-2x. glasses containing equal proportions of the group IV and V elements reveal compositional trends in T-g(x) that increase monotonically with x; they appear to polymerize increasingly over a wide 2 < r < 2.8 range of connectivities and are homogeneous. In these ternary glasses, experimental evidence for rigidity transitions is observed near (r) over bar = 2.40. Previous claims of a rigidity transition near (r) over bar = 2.67 can be traced to nanoscale phase separation effects.
引用
收藏
页码:713 / 724
页数:12
相关论文
共 73 条
[1]   Property extrema in GeAs sulphide glasses [J].
Aitken, BG ;
Ponader, CW .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 274 (1-3) :124-130
[2]   MECHANICAL AND CHEMICAL-THRESHOLDS IN IV-VI CHALCOGENIDE GLASSES [J].
ASOKAN, S ;
PRASAD, MVN ;
PARTHASARATHY, G ;
GOPAL, ESR .
PHYSICAL REVIEW LETTERS, 1989, 62 (07) :808-810
[3]   BROKEN CHEMICAL ORDER AND PHASE-SEPARATION IN GEXSE1-X GLASSES [J].
BOOLCHAND, P ;
GROTHAUS, J ;
PHILLIPS, JC .
SOLID STATE COMMUNICATIONS, 1983, 45 (02) :183-185
[4]   The structural origin of broken chemical order in GeSe2 [J].
Boolchand, P ;
Bresser, WJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2000, 80 (10) :1757-1772
[5]  
Boolchand P., 2000, Asian Journal of Physics, V9, P709
[6]   Rigidity transitions in binary Ge-Se glasses and the intermediate phase [J].
Boolchand, P ;
Feng, X ;
Bresser, WJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 293 :348-356
[7]  
Boolchand P, 2001, J OPTOELECTRON ADV M, V3, P703
[8]   STRUCTURE OF GES2 GLASS - SPECTROSCOPIC EVIDENCE FOR BROKEN CHEMICAL ORDER [J].
BOOLCHAND, P ;
GROTHAUS, J ;
TENHOVER, M ;
HAZLE, MA ;
GRASSELLI, RK .
PHYSICAL REVIEW B, 1986, 33 (08) :5421-5434
[9]   VIBRATIONAL THRESHOLDS IN COVALENT NETWORKS [J].
BOOLCHAND, P ;
ENZWEILER, RN ;
CAPPELLETTI, RL ;
KAMITAKAHARA, WA ;
CAI, Y ;
THORPE, MF .
SOLID STATE IONICS, 1990, 39 (1-2) :81-89
[10]  
BOOLCHAND P, 2000, INSULATING SEMICONDU, P212