Electronic stabilization of a 5 x 4 dopant superlattice on Si(111)5 x 2-Au -: art. no. 195430

被引:55
作者
McChesney, JL
Crain, JN
Pérez-Dieste, V
Zheng, F
Gallagher, MC
Bissen, M
Gundelach, C
Himpsel, FJ
机构
[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[2] Lakehead Univ, Dept Phys, Thunder Bay, ON P7B 5E1, Canada
[3] Univ Wisconsin, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.195430
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Si(111)5x2-Au surface exhibits a chain structure with additional Si atoms on top of the chains. They dope the chains to achieve the optimum band filling, according to recent local density calculations. Surprisingly, the Si atoms form a half-filled, disordered 5x4 lattice fluid, not an ordered 5x8 lattice. From their autocorrelation function an interatomic potential with 5x4 periodicity was deduced. An explanation for the 5x4 periodicity is provided by establishing a connection to the electronic structure near the Fermi level E-F, which is mapped by angle-resolved photoemission. The constant energy surfaces near E-F consist of one-dimensional lines at the boundaries of a 5x4 Brillouin zone. Such nested features of high density of states are capable of triggering a 5x4 superlattice interaction. The measurements establish a two-way connection between electronic structure and interatomic potentials: A one-dimensional Fermi surface instability triggers a superlattice of extra atoms, and the atoms provide the correct number of electrons for such an instability to occur. The band structure is discussed in view of the recently observed phase-separation into nanometer-sized segments of metallic and semiconducting character.
引用
收藏
页码:1 / 7
页数:7
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