Electrical and photoluminescence properties of evaporated CuIn1-xGaxTe2 thin films

被引：6

作者：

Béchiri, L

Mahdjoubi, L

Madelon, R

Nouet, G

机构：

[1] ISMRA Univ Caen, CNRS, UMR 6508, CRISMAT,ESCTM,Inst Sci Mat & Rayonnement, F-14050 Caen, France

[2] Univ Annaba, Inst Phys, LCCM, Sidi Amar 23200, Algeria

[3] ISMRA Univ Caen, CNRS, FRE 2149, LERMAT, F-14050 Caen, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 77卷 / 01期

关键词：

chalcopyrite; photoluminescence; defects;

D O I：

10.1016/S0927-0248(02)00243-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polycrystalline thin films of CuIn1-xGaxTe2 have been deposited by flash evaporation on Corning glass 7059 substrates at T-s = 200degreesC. Hall and resistivity measurements have been carried out down to 77K. These films are p-type and the variation of the resistivity may be linked to defects, disorder of the material or grain boundaries. The PL spectra of these films after annealing in argon atmosphere at T-a = 450degreesC have showed a broad band emission between 0.98 and 1,12eV in which the main peak appears at 1.05eV (at 4.2K). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：41 / 49

页数：9

共 16 条

[1] PREPARATION AND CHARACTERIZATION OF THE QUATERNARY ALLOY SYSTEM CUGASE2(1-X)TE2X [J].