Crystal defects and junction properties in the evolution of device fabrication technology

被引：27

作者：

Mica, I

Polignano, ML

Carnevale, G

Ghezzi, P

Brambilla, M

Cazzaniga, F

Martinelli, M

Pavia, G

Bonera, E

机构：

[1] STMicroelect, I-20041 Agrate Brianza, Italy

[2] INFM, Lab MDM, I-20041 Agrate Brianza, Italy

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期

关键词：

D O I：

10.1088/0953-8984/14/48/395

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper. the correlation between dislocation density and transistor leakage current is demonstrated. The stress evolution and the generation of defects are studied as a function of the process step, and experimental evidence is given of the role of structure geometry in determining the stress level and hence defect formation. Finally, the role of high-dose implantations and the related silicon amorphization and recrystallization is investigated.

引用

页码：13403 / 13410

页数：8

共 16 条

[1]

ANNUNZIATA R, 2000, MAT RES SOC S P, V610

[2]

ARMIGLIATO A, 2001, I PHYS C SER, V169

[3] EMITTER-COLLECTOR SHORTS IN BIPOLAR-DEVICES [J].