Monte Carlo simulation of electron beam lithography on topographical substrates

被引：9

作者：

Cui, Z ^{[1
]}

机构：

[1] Rutherford Appleton Lab, Cent Microstruct Facil, Didcot OX11 0QX, Oxon, England

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00039-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Monte Carlo program suite MOCASEL has been developed for 3-D simulation of e-beam lithography over a flat or a topographical substrate. A new "electron cloud" scheme is introduced to reduce the number of electrons used in the simulation, which results in a considerable reduction of computation time. Electron trajectories over substrate topography of single or composite materials are presented. 3-D resist profiles on a flat substrate and on a topographical substrate are compared. The line "swelling" effect due to electron forward scattering from a topography is revealed.

引用

页码：175 / 178

页数：4