Si field emitter arrays fabricated by anodization and transfer technique

被引：11

作者：

Higa, K ^{[1
]}

Nishii, K ^{[1
]}

Asano, T ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Fukuoka 820, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 12B期

关键词：

porous Si; anodization; Si field emitter; field emission;

D O I：

10.1143/JJAP.36.7741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field emitter arrays made of single-crystal Si are fabricated by anodization and transfer techniques. The anodization of Si which has n/p junctions produces field emitter tips. The emitter tips are then transferred to another Si substrate by the direct bonding. It has been found that an optimum doping range exists for successful bonding and transfer of the emitter tips. Field emission characteristics of field emitter arrays thus fabricated are also reported.

引用

页码：7741 / 7744

页数：4

共 11 条

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