A first-principles study of Mg-related defects in GaN

被引:6
作者
Chang, KJ [1 ]
Lee, SG [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
来源
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词
gallium nitride; deep level defect; photoluminescence;
D O I
10.4028/www.scientific.net/MSF.258-263.1137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the energetics of Mg-related defects in GaN through first-principles pseudopotential calculations. In p-type GaN, Mg-Ga(-) accepters are found to be compensated by V-N(+) donors and also deactivated by the formation of complexes such as Mg-Ga-V-N and Mg-i-V-N. We suggest that a Mg-i-V-N complex, which consists of a Mg interstitial and a N-vacancy, is responsible for the blue luminescence observed in heavily Mg-doped GaN. Although this defect complex is easily passivated by three hydrogen atoms, thermal annealing recovers the activity of this complex and thereby increases the intensity of the blue luminescence.
引用
收藏
页码:1137 / 1141
页数:5
相关论文
共 17 条
  • [1] HYDROGENATION OF P-TYPE GALLIUM NITRIDE
    BRANDT, MS
    JOHNSON, NM
    MOLNAR, RJ
    SINGH, R
    MOUSTAKAS, TD
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2264 - 2266
  • [2] Forces in molecules
    Feynman, RP
    [J]. PHYSICAL REVIEW, 1939, 56 (04): : 340 - 343
  • [3] Hellman H., 1937, EINFUHRUNG QUANTENCH
  • [4] EFFICACIOUS FORM FOR MODEL PSEUDOPOTENTIALS
    KLEINMAN, L
    BYLANDER, DM
    [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (20) : 1425 - 1428
  • [5] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS
    KOHN, W
    SHAM, LJ
    [J]. PHYSICAL REVIEW, 1965, 140 (4A): : 1133 - &
  • [6] LEE SG, 1997, UNPUB APPL PHYS LETT
  • [7] Point-defect complexes and broadband luminescence in GaN and AlN
    Mattila, T
    Nieminen, RM
    [J]. PHYSICAL REVIEW B, 1997, 55 (15): : 9571 - 9576
  • [8] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES
    MORKOC, H
    STRITE, S
    GAO, GB
    LIN, ME
    SVERDLOV, B
    BURNS, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) : 1363 - 1398
  • [9] THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    IWASA, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B): : L139 - L142
  • [10] HIGHLY P-TYPED MG-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS
    NAKAMURA, S
    SENOH, M
    MUKAI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1708 - L1711