Enhancement of hole injection in organic TFTs by ozone treatment of indium tin oxide electrodes

被引：7

作者：

Cho, Jeong Ho ^{[1
]}

Lee, Hwa Sung ^{[1
]}

Hwang, Minkyu ^{[1
]}

Choi, Hyun Ho ^{[1
]}

Kim, Woong-Kwon ^{[1
]}

Lee, Jong-Lam ^{[1
]}

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, Pohang 709784, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 05期

关键词：

D O I：

10.1149/1.2713664

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Indium tin oxide electrodes of polymer thin-film transistors (TFTs) were treated with ozone, with the aim of enhancing their hole injection properties. Synchrotron radiation photoelectron spectroscopy results showed that the ozone treatment of the electrodes resulted in an increase in their work function by about 0.4 eV. This increase was found to lower the hole injection barrier and produce an increase in the field-effect mobility.

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页码：H156 / H159

页数：4

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