Optimum thickness of SiO2 layer formed at the interface of N-ZnO/P-Si photodiodes

被引：17

作者：

Choi, YS ^{[1
]}

Lee, JY ^{[1
]}

Choi, WH ^{[1
]}

Yeom, HW ^{[1
]}

Im, S ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 12期

关键词：

n-ZnO/p-Si; photodiode; XPS; current-voltage; photoelectric;

D O I：

10.1143/JJAP.41.7357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550degreesC for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480degreesC was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.

引用

页码：7357 / 7358

页数：2

共 12 条

[1]

BHATTACHARYA P, 1997, SEMICONDUCTOR OPTOEL, P133

[2] WINDOW COATINGS FOR THE FUTURE [J].

GRANQVIST, CG .

THIN SOLID FILMS, 1990, 193 (1-2) :730-741

[3] Electron spectroscopic analysis of the SiO2/Si system and correlation with metal-oxide-semiconductor device characteristics [J].

Iwata, S ;

Ishizaka, A .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :6653-6713

[4] Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures [J].

Kim, HY ;

Kim, JH ;

Kim, YJ ;

Chae, KH ;

Whang, CN ;

Song, JH ;

Im, S .

OPTICAL MATERIALS, 2001, 17 (1-2) :141-144

[5] Large and abrupt optical band gap variation in In-doped ZnO [J].

Kim, KJ ;

Park, YR .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :475-477

[6] Influence of the post-treatment on the properties of ZnO thin films [J].

Nunes, P ;

Fortunato, E ;

Martins, R .

THIN SOLID FILMS, 2001, 383 (1-2) :277-280

[7]

PANKOVE, 1971, OPTICAL PROCESSES SE, P35

[8] ZnO thin films on semiconductor substrate for large area photodetector applications [J].

Purica, M ;

Budianu, E ;

Rusu, E .

THIN SOLID FILMS, 2001, 383 (1-2) :284-286

[9]

Reeves GK, 1982, IEEE ELECTRON DEVICE, V5, P111

[10] On the optical band gap of zinc oxide [J].

Srikant, V ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5447-5451

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