Optimum thickness of SiO2 layer formed at the interface of N-ZnO/P-Si photodiodes

被引：17

作者：

Choi, YS ^{[1
]}

Lee, JY ^{[1
]}

Choi, WH ^{[1
]}

Yeom, HW ^{[1
]}

Im, S ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 12期

关键词：

n-ZnO/p-Si; photodiode; XPS; current-voltage; photoelectric;

D O I：

10.1143/JJAP.41.7357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550degreesC for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480degreesC was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.

引用

页码：7357 / 7358

页数：2