Polycrystalline ZnO thin films on Si (100) deposited by filtered cathodic vacuum arc

被引：211

作者：

Xu, XL ^{[1
]}

Lau, SP ^{[1
]}

Chen, JS ^{[1
]}

Chen, GY ^{[1
]}

Tay, BK ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ion Beam Proc Lab, Singapore 639798, Singapore

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 223卷 / 1-2期

关键词：

photoluminescence; physical vapor deposition processes; zinc compounds; filtered cathodic vacuum arc;

D O I：

10.1016/S0022-0248(01)00611-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Polycrystalline ZnO thin films have been grown on Si (100) substrate using filtered cathodic vacuum are technique. Room temperature photoluminescence reveals a strong near-band edge emission at 378 nm and a weak green emission at around 510nm from the ZnO film deposited at 230 degreesC. The intensity ratio ol the near-band edge emission to green emission is about 100 indicating the high quality of the film. An additional emission at 420 nm, corresponding to the interstitial oxygen level, is also observed from the film grown at 430 degreesC. The ZnO thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, as well as transmittance measurement. (C) 2001 Published by Elsevier Science B.V.

引用

页码：201 / 205

页数：5

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