Oxidation of heated diamond C(100):H surfaces

被引:60
作者
Pehrsson, PE [1 ]
Mercer, TW [1 ]
机构
[1] USN, Res Lab, Gas Surface Dynam Sect, Washington, DC 20375 USA
关键词
Auger electron spectroscopy; diamond; electron energy loss spectroscopy (EELS); low energy electron diffraction (LEED); low index single crystal surfaces; oxidation; oxygen; surface chemical reaction;
D O I
10.1016/S0039-6028(00)00495-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper extends a previous study (Pehrsson and Mercer, submitted to Surf. Sci.) on unheated, hydrogenated, natural diamond (100) surfaces oxidized with thermally activated oxygen (O-2(.)). In this paper, the oxidation is performed at substrate temperatures from T-sub = 24 to 670 degrees C. The diamond surface composition and structure were then investigated with high resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES), electron loss spectroscopy (ELS) and low energy electron diffraction (LEED). The oxygen coverage (theta) increased in two stages, as it did during oxidation at T < 80 degrees C. However, there are fundamental differences between the oxidation of nominally unheated and heated diamond surfaces. This difference is attributed to simultaneous adsorption and rapid desorption of oxygen species at higher temperatures; the desorption step is much slower without heating. The initial oxidation rates were similar regardless of the substrate temperatures, but the peak coverage (theta) was lower at higher temperatures. For example, a plateaued at 0.4 +/- 0.1 ML at 600 degrees C. The lower saturation coverage is again attributed to oxygen desorption during oxidation. Consistent results were obtained on fully oxidized surfaces, which when heated in vacuum to T-sub = 600 degrees C, lost similar to 60% of their adsorbed oxygen. ELS revealed few C=C dimers on the oxidized surfaces, and more graphitization than on unheated surfaces. Oxidation at elevated temperatures also increased the carbonyl to ether ratio, reflecting etching-induced changes in the types of surface sites. The carbonyl and C-H stretch frequencies increased with oxygen dose due to fonnation of higher oxidation states and/or hydrogen bonding between adjacent groups. The oxygen types did not interconvert when the oxidized surfaces were heated in vacuum. Oxygen desorption generated a much more reactive surface than heating-induced dehydrogenation of the smooth, hydrogenated surface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:74 / 90
页数:17
相关论文
共 63 条
[1]  
ABYZOV AM, 1989, KINET KATAL, V30, P906
[2]  
AIZAWA T, 1993, PHYS REV B, V48, P24
[3]   THERMAL HYDROGENATION OF DIAMOND SURFACES STUDIED BY DIFFUSE REFLECTANCE FOURIER-TRANSFORM INFRARED, TEMPERATURE-PROGRAMMED DESORPTION AND LASER RAMAN-SPECTROSCOPY [J].
ANDO, T ;
ISHII, M ;
KAMO, M ;
SATO, Y .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1993, 89 (11) :1783-1789
[4]   VAPOR-PHASE OXIDATION OF DIAMOND SURFACES IN O2 STUDIED BY DIFFUSE-REFLECTANCE FOURIER-TRANSFORM INFRARED AND TEMPERATURE-PROGRAMMED DESORPTION SPECTROSCOPY [J].
ANDO, T ;
YAMAMOTO, K ;
ISHII, M ;
KAMO, M ;
SATO, Y .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1993, 89 (19) :3635-3640
[5]   ETCHING MODELS FOR A [111] DIAMOND SURFACE - CALCULATION OF TRIGON SLOPES [J].
ANGUS, JC ;
DYBLE, TJ .
SURFACE SCIENCE, 1975, 50 (01) :157-177
[6]   STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION [J].
AVOURIS, P ;
CAHILL, DG .
ULTRAMICROSCOPY, 1992, 42 :838-844
[7]   KINETICS OF CHEMISORPTION OF OXYGEN ON DIAMOND [J].
BANSAL, RC ;
VASTOLA, FJ ;
WALKER, PL .
CARBON, 1972, 10 (04) :443-&
[8]  
Bellamy L. J., 1975, INFRARED SPECTRA COM, V1
[9]   PHOTOEMISSION-STUDY OF OXYGEN-ADSORPTION ON (001) SILICON-CARBIDE SURFACES [J].
BERMUDEZ, VM .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :6084-6092
[10]   SI EJECTION AND REGROWTH DURING THE INITIAL-STAGES OF SI(001) OXIDATION [J].
CAHILL, DG ;
AVOURIS, P .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :326-328