Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p-n junction

被引：25

作者：

Emel'yanov, AM ^{[1
]}

Sobolev, NA

Yakimenko, AN

机构：

[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealed p-n junctions, characterized by higher values of the Er3+-related EL intensity at similar to 1.54 mu m in the breakdown regime at 300 K as compared with that at 85 K, have been studied in the temperature range from 85 to 300 K. Hole traps in the Er-O codoped n layer were found to be responsible for the anomalous EL behavior. Er-related EL was observed in the same samples in avalanche breakdown at high temperatures and in tunnel breakdown at low temperatures. (C) 1998 American Institute of Physics. [S0003-6951(98)03910-2].

引用

页码：1223 / 1225

页数：3

共 7 条

[1] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[2] Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].

Franzo, G ;

Coffa, S ;

Priolo, F ;

Spinella, C .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793

[3] Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy [J].

Matsuoka, M ;

Tohno, S .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :96-98

[4] Avalanche breakdown-related electroluminescence in single crystal Si:Er:O [J].

Sobolev, NA ;

Emelyanov, AM ;

Shtelmakh, KF .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :1930-1932

[5]

SOBOLEV NA, 1997, MAT SCI F9R P 19 INT

[6] Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy [J].

Stimmer, J ;

Reittinger, A ;

Nutzel, JF ;

Abstreiter, G ;

Holzbrecher, H ;

Buchal, C .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3290-3292

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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