Magnetization reversal with in-plane magnetic field in asymmetric ring dots

被引：6

作者：

Nakatani, R

Yamamoto, M

机构：

[1] Osaka Univ, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Grad Sch Engn, Engn & Frontier Res Ctr, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 01期

关键词：

magnetic ring dot; vortical magnetization; domain wall; micromagnetics simulation; magnetic memory;

D O I：

10.1143/JJAP.42.100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have computed magnetization reversal with the in-plane magnetic field in asymmetric ring dots that have partly planed outer sides. The direction of the vertical magnetization is controlled between clockwise and counterclockwise by in-plane magnetic fields. The asymmetric ring structure facilitates the application of the ring dots to magnetic random access memories.

引用

收藏

页码：100 / 101

页数：2

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