Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

被引：77

作者：

Nourbakhsh, A. ^{[1
,2
]}

Cantoro, M. ^{[1
,3
]}

Klekachev, A. ^{[1
,3
]}

Clemente, F. ^{[1
]}

Soree, B. ^{[1
]}

van der Veen, M. H. ^{[1
]}

Vosch, T. ^{[4
]}

Stesmans, A. ^{[3
]}

Sels, B. ^{[2
]}

De Gendt, S. ^{[1
,4
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Microbial & Mol Syst, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 15期

关键词：

RAMAN-SPECTROSCOPY; TEMPERATURE-DEPENDENCE; EPITAXIAL GRAPHENE; SIO2; SPECTRA; CARBON; PERFORMANCE; SCATTERING; GRAPHITE; ELECTRON;

D O I：

10.1021/jp910085n

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage V-NP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 degrees C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.

引用

页码：6894 / 6900

页数：7

共 62 条

[1] Environment-Induced Effects on the Temperature Dependence of Raman Spectra of Single-Layer Graphene [J].

Abdula, Daner ;

Ozel, Taner ;

Kang, Kwangu ;

Cahill, David G. ;

Shim, Moonsub .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (51) :20131-20134

[2] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[3] Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene [J].

Basko, D. M. ;

Piscanec, S. ;

Ferrari, A. C. .

PHYSICAL REVIEW B, 2009, 80 (16)

[4] Theory of resonant multiphonon Raman scattering in graphene [J].

Basko, D. M. .

PHYSICAL REVIEW B, 2008, 78 (12)

[5] Effect of inelastic collisions on multiphonon Raman scattering in graphene [J].

Basko, D. M. .

PHYSICAL REVIEW B, 2007, 76 (08)

[6] Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers [J].

Berciaud, Stephane ;

Ryu, Sunmin ;

Brus, Louis E. ;

Heinz, Tony F. .

NANO LETTERS, 2009, 9 (01) :346-352

[7] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[8] ACTION OF GRAPHITE AS A LUBRICANT [J].

BOLLMANN, W ;

SPREADBOROUGH, J .

NATURE, 1960, 186 (4718) :29-30

[9] Hydrogen on graphene: Electronic structure, total energy, structural distortions and magnetism from first-principles calculations [J].

Boukhvalov, D. W. ;

Katsnelson, M. I. ;

Lichtenstein, A. I. .

PHYSICAL REVIEW B, 2008, 77 (03)

[10] Tuning the gap in bilayer graphene using chemical functionalization: Density functional calculations [J].

Boukhvalov, D. W. ;

Katsnelson, M. I. .

PHYSICAL REVIEW B, 2008, 78 (08)

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