共 42 条
Environment-Induced Effects on the Temperature Dependence of Raman Spectra of Single-Layer Graphene
被引:52
作者:

Abdula, Daner
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Ozel, Taner
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Phys, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Kang, Kwangu
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Cahill, David G.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Shim, Moonsub
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
机构:
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
关键词:
D O I:
10.1021/jp809501e
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Environment-induced effects on the E-2G G-band and A(1)' 2D-band Raman spectral features of single-layer graphene provide insights on the intrinsic and extrinsic dependences of the phonon energy and line width on temperature. Graphene prepared via mechanical exfoliation in air exhibits a G-band line width that increases with temperature between 298 and 573 K but shows an opposite trend after annealing under Ar. The opposing temperature dependences are considered within the context of Kohn anomaly induced phonon softening and broadening. The primary cause of the changes in the E2G phonon energy and the electron-phonon coupling is attributed to ambient O-2 shifting the Fermi level away from the Dirac point. Our results emphasize the need to carefully consider the sample environment when investigating electronic and vibrational properties of graphene.
引用
收藏
页码:20131 / 20134
页数:4
相关论文
共 42 条
[1]
Phonon anharmonicities in graphite and graphene
[J].
Bonini, Nicola
;
Lazzeri, Michele
;
Marzari, Nicola
;
Mauri, Francesco
.
PHYSICAL REVIEW LETTERS,
2007, 99 (17)

Bonini, Nicola
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

Lazzeri, Michele
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

Marzari, Nicola
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

Mauri, Francesco
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2]
Electromechanical resonators from graphene sheets
[J].
Bunch, J. Scott
;
van der Zande, Arend M.
;
Verbridge, Scott S.
;
Frank, Ian W.
;
Tanenbaum, David M.
;
Parpia, Jeevak M.
;
Craighead, Harold G.
;
McEuen, Paul L.
.
SCIENCE,
2007, 315 (5811)
:490-493

Bunch, J. Scott
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

van der Zande, Arend M.
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

Verbridge, Scott S.
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

Frank, Ian W.
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

Tanenbaum, David M.
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

Parpia, Jeevak M.
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

Craighead, Harold G.
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

McEuen, Paul L.
论文数: 0 引用数: 0
h-index: 0
机构:
Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA
[3]
Temperature dependence of the Raman spectra of graphene and graphene multilayers
[J].
Calizo, I.
;
Balandin, A. A.
;
Bao, W.
;
Miao, F.
;
Lau, C. N.
.
NANO LETTERS,
2007, 7 (09)
:2645-2649

Calizo, I.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Balandin, A. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Bao, W.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Miao, F.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Lau, C. N.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA
[4]
Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices
[J].
Calizo, I.
;
Miao, F.
;
Bao, W.
;
Lau, C. N.
;
Balandin, A. A.
.
APPLIED PHYSICS LETTERS,
2007, 91 (07)

Calizo, I.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Miao, F.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Bao, W.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Lau, C. N.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

Balandin, A. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA
[5]
Raman fingerprint of charged impurities in graphene
[J].
Casiraghi, C.
;
Pisana, S.
;
Novoselov, K. S.
;
Geim, A. K.
;
Ferrari, A. C.
.
APPLIED PHYSICS LETTERS,
2007, 91 (23)

Casiraghi, C.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

Pisana, S.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England

Ferrari, A. C.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 OFA, England
[6]
Extreme oxygen sensitivity of electronic properties of carbon nanotubes
[J].
Collins, PG
;
Bradley, K
;
Ishigami, M
;
Zettl, A
.
SCIENCE,
2000, 287 (5459)
:1801-1804

Collins, PG
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Bradley, K
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Ishigami, M
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Zettl, A
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[7]
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
[J].
Das, A.
;
Pisana, S.
;
Chakraborty, B.
;
Piscanec, S.
;
Saha, S. K.
;
Waghmare, U. V.
;
Novoselov, K. S.
;
Krishnamurthy, H. R.
;
Geim, A. K.
;
Ferrari, A. C.
;
Sood, A. K.
.
NATURE NANOTECHNOLOGY,
2008, 3 (04)
:210-215

Das, A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Pisana, S.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Chakraborty, B.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Piscanec, S.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Saha, S. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

论文数: 引用数:
h-index:
机构:

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Krishnamurthy, H. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

Ferrari, A. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

论文数: 引用数:
h-index:
机构:
[8]
Approaching ballistic transport in suspended graphene
[J].
Du, Xu
;
Skachko, Ivan
;
Barker, Anthony
;
Andrei, Eva Y.
.
NATURE NANOTECHNOLOGY,
2008, 3 (08)
:491-495

Du, Xu
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

Skachko, Ivan
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

Barker, Anthony
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

Andrei, Eva Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[9]
Reversible surface oxidation and efficient luminescence quenching in semiconductor single-wall carbon nanotubes
[J].
Dukovic, G
;
White, BE
;
Zhou, ZY
;
Wang, F
;
Jockusch, S
;
Steigerwald, ML
;
Heinz, TF
;
Friesner, RA
;
Turro, NJ
;
Brus, LE
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
2004, 126 (46)
:15269-15276

Dukovic, G
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

White, BE
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Zhou, ZY
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Wang, F
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Jockusch, S
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Steigerwald, ML
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Heinz, TF
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Friesner, RA
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Turro, NJ
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA

Brus, LE
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Chem, New York, NY 10027 USA
[10]
Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects
[J].
Ferrari, Andrea C.
.
SOLID STATE COMMUNICATIONS,
2007, 143 (1-2)
:47-57

Ferrari, Andrea C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England