SiGe-based FETs:: buffer issues and device results

被引：11

作者：

Herzog, HJ ^{[1
]}

Hackbarth, T ^{[1
]}

Höck, G ^{[1
]}

Zeuner, M ^{[1
]}

König, U ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res Ctr Ulm, D-89231 Ulm, Germany

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

SiGE; strain relieved buffer; Si/SiGe hetero field-effect transistor;

D O I：

10.1016/S0040-6090(00)01466-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiGe quantum well structures gain increasing interest in the Si technology. The preparation of a Si channel or a Ge-rich or even a pure cc channel with a respective two-dimensional carrier gas opens the attractive possibility to fabricate high performance n- or p-type field effect transistors. For both device types, a virtual substrate surface is required which is created by a strain relieved buffer layer grown on a Si standard wafer. The paper reviews various approaches of SiGe buffers including special attempts to reduce the thickness and to improve the quality. N- and p-type modulation-doped field-effect transistors are presented which show comparably good device characteristics and cut-off frequencies in the range of 100-120 GHz. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：36 / 41

页数：6

共 20 条

[1] Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing [J].