The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers

被引：22

作者：

Hammond, R

Phillips, PJ

Whall, TE

Parker, EHC

Graf, T

VonKanel, H

Shields, AJ

机构：

[1] ETH HONGGERBERG,FESTKORPERPHYS LAB,CH-8093 ZURICH,SWITZERLAND

[2] TOSHIBA CAMBRIDGE RES CTR,CAMBRIDGE CB4 4W,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 17期

关键词：

D O I：

10.1063/1.120105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1-xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 mu m and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 mu m orthogonal misfit interactions occur and relaxation is dominated by the modified Frank-Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. (C) 1997 American Institute of Physics. [S0003-6951(97)04443-4].

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页码：2517 / 2519

页数：3

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