EVIDENCE FROM ION CHANNELING IMAGES FOR THE ELASTIC RELAXATION OF A SI0.85GE0.15 LAYER GROWN ON A PATTERNED SI SUBSTRATE

We demonstrate the ability of ion channeling analysis using a scanned, focused, 2 MeV proton beam from a nuclear microprobe to detect and quantify elastic relaxation in a Si1-xGex layer grown on a Si substrate. Channeling images of a sample consisting of a Si0.85Ge0.15 layer grown on a substrate patterned to produce 10 mu m wide raised mesas were produced which revealed lattice plane bending of up to 0.25 degrees, consistent with elastic relaxation of the epilayer. The channeling results are compared with these produced from electron backscattering diffraction. (C) 1995 American Institute of Physics.