Electroluminescence from silicon nanowires

被引：24

作者：

Huo, J ^{[1
]}

Solanki, R ^{[1
]}

Freeouf, JL ^{[1
]}

Carruthers, JR ^{[1
]}

机构：

[1] OGI Sch Sci & Engn, Beaverton, OR 97006 USA

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 12期

关键词：

D O I：

10.1088/0957-4484/15/12/027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Room temperature electroluminescence has been demonstrated from undoped silicon nanowires that were grown from disilane. Ensembles of nanowires were excited by capacitively coupling them to an ac electric field. The emission peak occurred at about 600 nm from wires of average diameter of about 4 nm. The emission appears to result from band-to-band electron-hole recombination.

引用

页码：1848 / 1850

页数：3

共 17 条

[1]

BERHANE S, 1993, MATER RES SOC SYMP P, V298, P99, DOI 10.1557/PROC-298-99

[2] Voltage-tunable photo- and electroluminescence of porous silicon [J].