Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties

被引：9

作者：

He, XC ^{[1
]}

Shen, HS

Zhang, ZM

Hu, XJ

Wan, YZ

Shen, T

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab MMCM, Shanghai 200030, Peoples R China

[2] Hirata Precis Prod Co Ltd, Shanghai 200137, Peoples R China

来源：

关键词：

microwave CVD; diamond films heteroepitaxy; 3c-SiC; interface;

D O I：

10.1016/S0925-9635(00)00317-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microwave CVD heteroepitaxial diamond film on a 4 degrees off-axis Si(100) substrate is obtained by two stages. The first one is to grow oriented 3c-SiC layers on Si(100) using a non-toxic and non-inflammable (CH3)(6)Si2NH organic compound carried by hydrogen. The following stage is to grow oriented diamond films on them under the atmosphere of CH4 and H-2. In each stage there are bias and growth processions. The micro-Raman and micro-Auger analyses prove that there is a perfect orientation relationship between the film and substrate as following: diamond < 001 >//3c-SiC < 001 >//Si < 001 >. The Hall effect indicates that the film is a P type, whose resistivity is 9.4 x 10(-3) Omega cm, the Hall coefficient is 2.9 cm(3)/Q, the hole mobility is 309 cm(2)/V s and the carrier concentration reaches 2.2 x 10(18) cm(-3). (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1626 / 1631

页数：6