Determination of the nature of principal scattering mechanism in well-annealed vacuum deposited thin films of the ternary thermoelectric material Bi2(Te0.8Se0.2)3

被引:4
作者
Das, VD [1 ]
Mallik, RC [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Thin Film Lab, Madras 600036, Tamil Nadu, India
关键词
thermopower; resistivity; parameter; lattice scattering;
D O I
10.1016/S0040-6090(02)00919-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resistivity and thermopower measurements were performed on thin films of Bi-2(Te0.8Se0.2)(3) prepared by flash evaporation technique. Applying the Jain-Verma theory to the experimental data of Bi-2(Te0.8Se0.2)(3), scattering index parameter was evaluated. The value of scattering index parameter was found to lie between -0.3 and -0.2. This indicates the presence of other scattering mechanisms, in addition to the lattice scattering. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:75 / 78
页数:4
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