ANOMALOUS TEMPERATURE-DEPENDENCE OF THERMOELECTRIC-POWER OF PBTE THIN-FILMS

被引：12

作者：

DAS, VD

BHAT, KS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期

关键词：

D O I：

10.1063/1.331849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6641 / 6645

页数：5

共 20 条

[1] THERMOELECTRIC POWER OF SINGLE-CRYSTAL P-TYPE PBSE [J].

ABRAMS, H ;

TAUBER, RN .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3868-&

[2]

BORELIUS G, 1930, P ACAD SCI AMSTERDAM, V35, P10

[3] THERMOELECTRIC PROPERTIES OF IMPURITY DOPED PBTE [J].

BORISOVA, LD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (01) :K19-K22

[4]

BYTENSKII LI, 1977, SOV PHYS SEMICOND+, V11, P894

[5]

CHOPRA KL, 1969, THIN FILM PHENOMENA, P246

[6] THE ABSOLUTE SCALE OF THERMOELECTRIC POWER AT HIGH TEMPERATURE [J].

CUSACK, N ;

KENDALL, P .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (467) :898-901

[7] SIZE AND TEMPERATURE EFFECTS ON THERMOELECTRIC-POWER OF BETA-TIN THIN-FILMS [J].

DAS, VD ;

MOHANTY, JC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :977-981

[8] THERMOELECTRIC-POWER OF TELLURIUM THIN-FILMS AND ITS THICKNESS AND TEMPERATURE-DEPENDENCE [J].

DAS, VD ;

JAYAPRAKASH, N ;

SOUNDARARAJAN, N .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (12) :3331-3334

[9] ELECTRICAL TRANSPORT-PROPERTIES OF AG-DOPED P-TYPE PBTE EPITAXIAL THIN-FILMS [J].

DAWAR, AL ;

PARADKAR, SK ;

KUMAR, P ;

TANEJA, OP ;

MATHUR, PC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :227-232

[10] 3-5 MUM SINGLE-CRYSTAL PBTE AND PBXSN1-X TE DETECTORS [J].

EDDOLLS, DV .

INFRARED PHYSICS, 1976, 16 (1-2) :47-50

← 1 2 →