Whispering gallery resonances in semiconductor micropillars

被引：39

作者：

Astratov, V. N. ^{[1
]}

Yang, S.

Lam, S.

Jones, B. D.

Sanvitto, D.

Whittaker, D. M.

Fox, A. M.

Skolnick, M. S.

Tahraoui, A.

Fry, P. W.

Hopkinson, M.

机构：

[1] Univ N Carolina, Dept Phys & Opt Sci, Ctr Optoelect & Opt Commun, Charlotte, NC 28223 USA

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[3] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2771373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the authors observe high quality (Q up to 20 000) whispering gallery modes (WGMs) with small modal volumes V similar to 0.3 mu m(3) in 4-5 mu m Al(Ga)As/GaAs micropillars by employing an experimental geometry in which both excitation and collection of emission are in a direction normal to the sidewalls of the pillars. They show that WGMs provide at least two times larger values of the figure of merit for strong coupling applications Q/root V compared to "photonic dot" states in pillars with comparable size. (c) 2007 American Institute of Physics.

引用

页数：3

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