High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

被引:885
作者
Kang, Seong Jun
Kocabas, Coskun
Ozel, Taner
Shim, Moonsub
Pimparkar, Ninad
Alam, Muhammad A.
Rotkin, Slava V.
Rogers, John A.
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Engn Sci & Mech, Urbana, IL 61801 USA
[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[5] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[6] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[7] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[8] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[9] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
[10] Lehigh Univ, Ctr Adv Mat & Nanotechnol, Bethlehem, PA 18015 USA
基金
美国国家科学基金会;
关键词
D O I
10.1038/nnano.2007.77
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as similar to 2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching similar to 1,000 cm(2) V-1 s(-1) and similar to 3,000 S m(-1), respectively, and with current outputs of up to similar to 1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.
引用
收藏
页码:230 / 236
页数:7
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