Photoluminescence from Si1-xGex alloy nanocrystals

被引：105

作者：

Takeoka, S

Toshikiyo, K

Fujii, M ^{[1
]}

Hayashi, S

Yamamoto, K

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

[2] Kobe Univ, Grad Sch Sci & Technol, Div Math & Mat Sci, Kobe, Hyogo 6578501, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.61.15988

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) from Si1-xGex alloy nanocrystals (nc-Si1-xGex) as small as 4-5 nm in diameter was studied as a function of the Ge content. The nc-Si1-xGex samples were fabricated by the cosputtering of Si, Ge, and SiO2 and postannealing at 1100 degrees C. High-resolution transmission electron microscopy, electron diffraction, and Raman spectroscopy clearly showed the growth of spherical Si1-xGex nanocrystals in SiO2 matrices. The PL spectra of nc-Si1-xGex were found to be very sensitive to the Ge content. A low-energy shift of the PL peak from the widened band gap of Si nanocrystals to that of Ge nanocrystals with increasing Cre content was clearly observed.

引用

页码：15988 / 15992

页数：5

共 30 条

[1]

Abstreiter G, 1998, SEMICONDUCT SEMIMET, V49, P37

[2] RAMAN-SPECTRA OF C-SI1-XGEX ALLOYS [J].